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| v04.0903 MICROWAVE CORPORATION HMC194MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz Features Ultra Small Package: MSOP8 High Isolation: 50 dB Positive Control: 0/+3V to 0/+7V Typical Applications The HMC194MS8 is ideal for: * Cellular/PCS Base Stations * Portable Wireless * MMDS & WirelessLAN Functional Diagram General Description The HMC194MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in applications which require high isolation between two RF paths. The device can control signals from DC to 3 GHz and has been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC currents with control inputs compatible with CMOS and most TTL logic families. RF1 and RF2 are reflective opens when "OFF". 14 SWITCHES - SMT Electrical Specifications, TA = +25 C, Vctl = 0/+5 Vdc, 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz RF1 / RF2 RF1 / RF2 DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 0.5 - 1.0 GHz 0.5 - 3.0 GHz 0/+5V Control 0.5 - 1.0 GHz 0.5 - 3.0 GHz DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON , tOFF (50% CTL to 10/90% RF) 10 24 ns ns 45 / 47 39 / 43 31 24 18 14 13 13 19 17 39 37 Min. Typ. 0.7 0.7 0.8 0.9 49 / 51 42 / 46 35 28 21 17 17 17 23 21 43 41 Max. 0.9 0.9 1.1 1.4 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Return Loss Input Power for 1 dB Compression 0/+5V Control Input Third Order Intercept (Two-tone Input Power = +7 dBm Each Tone) Switching Characteristics 14 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v04.0903 MICROWAVE CORPORATION HMC194MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz GaAs MMIC Insertion Loss 0 -0.5 INSERTION LOSS (dB) SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Isolation 0 -10 -20 ISOLATION (dB) -1 -1.5 -2 -2.5 -3 0 1 2 3 FREQUENCY (GHz) -30 -40 RF1 -50 -60 -70 0 1 2 3 FREQUENCY (GHz) RF2 Return Loss 0 14 S11 RETURN LOSS (dB) -10 -20 -30 -40 0 1 2 3 FREQUENCY (GHz) Input 0.1 and 1.0 dB Compression vs. Control Voltage INPUT POWER FOR 0.1 & 1dB COMPRESSION 30 P1 dB at 1900 MHz Input Third Order Intercept Point vs. Control Voltage INPUT THIRD ORDER INTERCEPT (dBm) 60 P1 dB at 900 MHz 25 55 20 50 900 MHz 15 P0.1 dB at 900 MHz P0.1 dB at 1900 MHz 45 1900 MHz 10 4 5 6 Control Input (Vdc) 7 8 40 4 5 6 Control Input (Vdc) 7 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 43 SWITCHES - SMT S22 v04.0903 MICROWAVE CORPORATION HMC194MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz Compression vs. Control Voltage Carrier at 900 MHz Bias Vdd (Vdc) +4 +5 +6 +7 Input Power for 0.1 dB Compression (dBm) 19 21 21 22 Input Power for 1.0 dB Compression (dBm) 22 23 24 25 Carrier at 1900 MHz Input Power for 0.1 dB Compression (dBm) 18 19 20 21 Input Power for 1.0 dB Compression (dBm) Caution: Do not operate in 1dB compression at power levels above +25 dBm and do not "hot switch" power levels greater than +18 dBm (Control = 0/+5Vdc). DC blocks are required at ports RFC, RF1 and RF2. 20 21 22 23 Distortion vs. Control Voltage Control Input Third Order Intercept (dBm) +7 dBm Each Tone 900 MHz 43 50 1900 MHz 41 48 14 SWITCHES - SMT (Vdc) +5 +7 Truth Table *Control Input Voltage Tolerances are 0.2 Vdc. Control Input* A (Vdc) 0 +3 0 +5 0 +7 B (Vdc) +3 0 +5 0 +7 0 Control Current Ia (uA) -23 +23 -95 +95 -190 +190 Ib (uA) +23 -23 +95 -95 +190 -190 Signal Path State RF to RF1 ON OFF ON OFF ON OFF RF to RF2 OFF ON OFF ON OFF ON 14 - 44 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v04.0903 MICROWAVE CORPORATION HMC194MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz Absolute Maximum Ratings Control Voltage Range (A & B) Storage Temperature Operating Temperature -0.2 to +7.5 Vdc -65 to +150 C -40 to +85 C Outline Drawing 14 SWITCHES - SMT 14 - 45 NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v04.0903 MICROWAVE CORPORATION HMC194MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz Typical Application Circuit 14 SWITCHES - SMT Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 7 Volts applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with Control set to 0/+7V. See "Design Techniques Enhance Isolation in Switch Assemblies" for HMC194MS8 Applications, "Application Notes" Section. 14 - 46 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v04.0903 MICROWAVE CORPORATION HMC194MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz Evaluation Circuit Board 14 SWITCHES - SMT 14 - 47 List of Material Item J1 - J3 J4 - J6 C1 - C3 R1, R2 U1 PCB* Description PC Mount SMA RF Connector DC Pin 100 pF capacitor, 0402 Pkg. 100 resistor, 0402 Pkg. HMC194MS8 SPDT Switch 107821 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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